I. Equipment Overview:

Primarily used for the polycrystalline synthesis process of 3-4 inch indium phosphide and gallium phosphide III-V compound semiconductor crystal materials, with an automatic control system.

II. Equipment Parameter Types:

III. Main Features and Advantages of the Equipment

1★Equipped with powerful operating functions and a Windows interface with screen-based operation, allowing users to conveniently modify process control parameters and display various process statuses at any time; equipped with fault self-diagnosis software, which can significantly reduce maintenance time;

2★Adopts a highly reliable industrial computer + PLC control mode for fully automatic control of furnace temperature, gas flow, valves, and other components, achieving automation of the entire process;

3★The program supports manual/automatic operation. After a power failure or an intermediate shutdown, the system can be restarted and the temperature can be manually increased according to the process, saving process time;

4★Gas flow is precisely controlled by high-pressure valves and adopts analog signal closed-loop control, with strong and weak currents separated. The gas opening function is equipped with a soft-start feature;

5★Equipped with multiple alarm functions and safety protection functions;
6★The constant-temperature zone is automatically adjusted to accurately control the actual process temperature of the reaction tube;