I. Equipment Overview:

Primarily used for the single-crystal growth process of 4-6 inch indium phosphide, gallium phosphide, and other III-V compound semiconductor crystal materials, with an automatic control system.

II. Equipment Parameter Types:

III. Main Features and Advantages of the Equipment

1★Powerful operating functions, a Windows interface, and screen-based operation enable users to conveniently modify process control parameters and display various process statuses at any time; equipped with fault self-diagnosis software, it can greatly reduce maintenance time;

2★Adopts a highly reliable industrial computer + PLC mode for fully automatic control of furnace temperature, gas flow, valves, and other parameters, achieving automation of the entire process;

3★The program supports manual/automatic operation. After a power failure or an interruption midway through operation, the system can be restarted and the temperature can be manually increased according to the process, saving process time;

4★Gas flow is precisely controlled by high-pressure valves and uses analog-signal closed-loop control. The strong-current and weak-current circuits are separated, and the gas opening features a soft-start function;

5★Equipped with multiple alarm and safety protection functions;
6★The constant-temperature zone is automatically adjusted to accurately control the actual process temperature of the reaction tube;